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IPD22N08S2L-50

Part Number IPD22N08S2L-50
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up ...
Datasheet IPD22N08S2L-50





Overview
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPD22N08S2L-50 Product Summary V DS R DS(on),max ID 75 V 50 mΩ 25 A PG-TO252-3-11 Type IPD22N08S2L-50 Package Marking PG-TO252-3-11 2N08L50 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=22A Gate source voltage V GS Power dissipation P to...






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