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IPD70P04P4-09

Part Number IPD70P04P4-09
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C p...
Datasheet IPD70P04P4-09





Overview
OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD70P04P4-09 Product Summary V DS R DS(on) ID -40 V 8.
9 mΩ -73 A PG-TO252-3-313 Type IPD70P04P4-09 Package Marking PG-TO252-3-313 4P0409 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=-36A Avalanche current, single pulse I AS - Gate source voltage V GS - Power d...






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