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IPD75N04S4-06

Part Number IPD75N04S4-06
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...
Datasheet IPD75N04S4-06





Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD75N04S4-06 Product Summary V DS R DS(on),max ID 40 V 5.
9 mΩ 75 A PG-TO252-3-313 Type IPD75N04S4-06 Package Marking PG-TO252-3-313 4N0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=35A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot...






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