Part Number
|
FIR3441AG |
Manufacturer
|
First Semiconductor |
Description
|
P-Channel Enhancement Mode Power MOSFET |
Published
|
May 22, 2015 |
Detailed Description
|
P-Channel Enhancement Mode Power MOSFET
Description
The FIR3441AG uses advanced trench technology to provide excellent R...
|
Datasheet
|
FIR3441AG
|
Overview
P-Channel Enhancement Mode Power MOSFET
Description
The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features • VDS = -30V,ID = -4.
4A
RDS(ON) 65mΩ @ VGS=-4.
5V RDS(ON) 50mΩ @ VGS=-10V
• High Power and current handing capability • Lead free product is acquired • Surface Mount Package
Application • PWM applications • Load switch • Power management
FIR3441AG
Top vlew SOT-23 D
G S
D G
S
Schematic diagram
Marking and pin Assignment
Package Marking And Ordering Information
Device Marking
Device
Device Package
3401A
NC...
Similar Datasheet