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IPB180N03S4L-01

Part Number IPB180N03S4L-01
Manufacturer Infineon
Description Power-Transistor
Published May 23, 2015
Detailed Description IPB180N03S4L-01 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C...
Datasheet IPB180N03S4L-01





Overview
IPB180N03S4L-01 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on) ID 30 V 1.
05 mΩ 180 A PG-TO263-7-3 Type IPB180N03S4L-01 Package PG-TO263-7-3 Marking 4N03L01 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T C=25 °C I D=90 A Avalanche current, single pulse I AS - Gate source voltage V GS - ...






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