SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet VDSS RDS(on) (Typ.
) ID PD 1200V 80m 40A 262W Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Low VSD 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant Application ・Solar inverters ・DC/DC converters ・Induction heating ・Motor drives Outline TO-247 Inner circuit D(2) G(1) *1 *2 S(3) (1) Gate (2) Drain (3) Source *1 Body Diode *2 SBD Packaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 - SCH2080KE Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage...

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