Transistors
Small switching (60V, 2A)
2SK1717
!Features 1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc.
because of
undervoltage actuation (2.
5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
!Structure Silicon N-channel MOS FET
transistor
!External dimensions (Units : mm)
4.
5+−00.
.
21 1.
6±0.
1
1.
5±0.
1
0.
5±0.
1
4.
0−+00.
.
35 2.
5+−00.
.
21
ROHM : MPT3 E I A J : SC-62
1.
0±0.
3
(1) (2) (3)
0.
4±0.
1 1.
5±0.
1
0.
5±0.
1 3.
0±0.
2
0.
4±0.
1 1.
5±0.
1
Abbreviated symbol : KE
0.
4−+00.
.
015
(1) Gate (2) Drain (3) Source
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-source voltage
VDSS
...