TPT5609
TPT5609
TRANSISTOR (
NPN)
FEATURES Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 1 Collector-base voltage
A
V(BR)CBO: 25 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92L
1.
EMITTER 2.
COLLECTOR 3.
BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) VBE
fT
Cob
Test con...