Power F-MOS FETs
2SK2538
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed q High-speed switching q No secondary breakdown
s Applications
q High-speed switching (switching mode
regulator) q For high-frequency power amplification
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC Pulse
Avalanche energy capability
Allowable power dissipation
TC= 25˚C Ta= 25˚C
Channel temperature
Storage temperature
Symbol VDSS VGSS ID IDP EAS *
PD
Tch Tstg
Rating 250 ±30 ±2 ±4 10 30 2 150
–55 to +150
* L= 5mH, IL= 2A, VDD= 30V, 1 pulse
Unit V V A A mJ
W
˚C ˚C
s Electrical Characteristics (Tc = 25˚C...