Part Number
|
HFI50N06 |
Manufacturer
|
SemiHow |
Description
|
60V N-Channel MOSFET |
Published
|
Jun 7, 2015 |
Detailed Description
|
HFW50N06_HFI50N06
Nov 2009
HFW50N06 / HFI50N06
60V N-Channel MOSFET
BVDSS = 60 V RDS(on) = 18 mΩ ID = 50 A
FEATURES
...
|
Datasheet
|
HFI50N06
|
Overview
HFW50N06_HFI50N06
Nov 2009
HFW50N06 / HFI50N06
60V N-Channel MOSFET
BVDSS = 60 V RDS(on) = 18 mΩ ID = 50 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
018 Ω (Typ.
) @VGS=10V 100% Avalanche Tested
D2-PAK I2-PAK
HFW50N06 HFI50N06 1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Con...
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