Part Number
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HFB1N70S |
Manufacturer
|
SemiHow |
Description
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N-Channel MOSFET |
Published
|
Jun 7, 2015 |
Detailed Description
|
HFB1N70S
Dec 2012
HFB1N70S
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ ȍ ID = 0.3 A
FEATURES
Originativ...
|
Datasheet
|
HFB1N70S
|
Overview
HFB1N70S
Dec 2012
HFB1N70S
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ ȍ ID = 0.
3 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
TO-92
1 2 3
1.
Gate 2.
Drain 3.
Source D
G
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ଇ)
– Continuous (TC = 100ଇ)
– Puls...
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