HFP6N90 Dec 2005 HFP6N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.
95 Ω ID = 6.
0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 1.
95 Ω (Typ.
) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Not...

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