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Part Number
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AM9945N |
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Manufacturer
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BYD Microelectronics |
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Description
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Dual N-Channel MOSFET |
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Published
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Jun 8, 2015 |
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Detailed Description
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BYD Microelectronics Co., Ltd.
AM9945N
Dual N-Channel MOSFET
General Description
The AM9945N uses advanced trench tech...
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Datasheet
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AM9945N
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Overview
BYD Microelectronics Co.
, Ltd.
AM9945N
Dual N-Channel MOSFET
General Description
The AM9945N uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for used as DC-DC converters and power managements in portable and battery-powered products.
Features
• VDS (V) =60V • Low on-state resistance
RDS(on) = 89 mΩ MAX (VGS = 10V, ID =3.
6A) RDS(on) = 104 mΩ MAX (VGS = 4.
5V, ID = 3.
4A) • Fast switching speed
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
SYMBOL LIMIT
Drain to Source Voltage
VDSS
60
Gate to Source Voltage
VGSS
±20
Drain Current (DC)a Drain Current (pulse)b
TA=25℃ TA=70℃
ID(DC) ID(pulse)
±3.
6 ±3.
1 ±25
Contnuous Source Cu...
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