Ordering number : EN2006D
2SA1417/2SC3647
Bipolar
Transistor
(-)100V, (-)2A, Low VCE(sat), (
PNP)
NPN Single PCP
http://onsemi.
com
Features
• Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs
Specifications ( ) : 2SA1417
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
VCBO VCEO VEBO IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Conditions When mounted on ceramic substrate (250mm2×0.
8mm)...