Ordering number : EN2005C
2SA1416/2SC3646
Bipolar
Transistor
(–)100V, (–)1A, Low VCE(sat), (
PNP)
NPN Single PCP
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Features
• Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specifications ( ) : 2SA1416
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
VCBO VCEO VEBO IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Conditions When mounted on ceramic substrate (250mm2×0.
8m...