Ordering number:ENN2557B
NPN Epitaxial Planar Silicon
Transistor
2SC4188
Ultrahigh-Definition CRT Display Video Output Applications
Features
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent high
frequency characteristic : Cre=1.
3pF typ.
· Adoption of FBET process.
Package Dimensions
unit:mm 2010C
[2SC4188]
10.
2 3.
6 5.
1
4.
5 1.
3
2.
7 6.
3
15.
1
18.
0 5.
6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collecor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC Tc=25˚C
Junction Tempreature Storage temperature
Tj Tst...