Ordering number:EN3019
NPN Triple Diffused Planar Silicon
Transistor
2SC4412
TV Camera Deflection, High-Voltage Driver Applications
Features
· High breakdown voltage (VCEO≥300V).
· Small reverse transfer capacitance and excellent high
frequency characteristic (Cre : 1.
0pF typ).
· Excellent DC current gain ratio (hFE ratio : 0.
95 typ).
· Adoption of FBET process.
Package Dimensions
unit:mm 2018B
[2SC4412]
0.
4 3
0.
16 0~0.
1
0.
5 1.
5 0.
5 2.
5
1 0.
95 0.
95 2 1.
9 2.
9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature...