Ordering number:EN3097
Features
· High breakdown voltage (VCEO≥300V).
· Excellent high frequency characteristic.
· Adoption of MBIT process.
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1710/2SC4490
High-Definition CRT Display Video Output Applications
Package Dimensions
unit:mm 2064
[2SA1710/2SC4490]
( ) : 2SA1710
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
...