Ordering number:EN3138
NPN Epitaxial Planar Silicon
Transistors
2SC4519
High-Speed Switching Applications
Features
· Adoption of FBET process.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small-sized package.
Package Dimensions
unit:mm 2018A
[2SC4519]
0.
4 3
0.
16
0~0.
1
0.
5 1.
5 0.
5 2.
5
1 0.
95 0.
95 2 1.
9 2.
9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Paramete...