TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC4539
Power Amplifier Applications Power Switching Applications
2SC4539
Unit: mm
· Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 700 mA) · High speed switching time: tstg = 0.
3 µs (typ.
) · Small flat package · PC = 1.
0 to 2.
0 W (mounted on ceramic substrate) · Complementary to 2SA1743
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Collector power dissipation
VCBO VCEO VEBO
IC IB PC PC
(Note)
50 30 6 1.
2 0.
3 500
1000
Junction temperature Storage temperature range
Tj 150 Tstg ...