TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC4540
Power Amplifier Applications Power Switching Applications
2SC4540
Unit: mm
• Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.
4 µs (typ.
) • Small flat package
• PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SA1735
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Collector power dissipation
VCBO VCEO VEBO
IC IB PC PC
(Note)
80 50 6 1 0.
2 500
1000
Junction temperature Storage temperature range
Tj 150 Tstg ...