TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC4541
Power Amplifier Applications Power Switching Applications
2SC4541
Unit: mm
• Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1.
5 A) • High speed switching time: tstg = 0.
5 μs (typ.
) • Small flat package
• PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SA1736
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
80 50 6 3 0.
6...