TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA1213
Power Amplifier Applications Power Switching Applications
2SA1213
Unit: mm
• Low saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.
0 μs (typ.
) • Small flat package
• PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SC2873
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
−50 −50 −5 −2 −0.
4 500
1000
150 −55 to 15...