HG Semiconductors
HG RF POWER
TRANSISTOR
2SC2290
ROHS Compliance,Silicon
NPN POWER
TRANSISTOR
Specified 12.
5V, 28MHz Characteristics
Output Power
: Po = 60W PEP (Min.
)
Power Gain
: Gp = 11.
8dB (Min.
)
Collector Efficiency
ηC: = 35% (Min.
)
Intermodulation Distortion : IMD = 30dB (Max.
)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range
SYMBOL
RATING
UNIT
V CBO V CES VCEO
V EBO IC CP Tj T stg
45 45
18 4 20 175 175 65~175
V V
V V A
W °C °C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
JEDEC EIAJ TOSHIB...