T1G6001032-SM
10W, 32V, DC – 6 GHz, GaN RF Power
Transistor
Applications
• Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers
Product Features
• Frequency: DC to 6 GHz • Output Power (P3dB): 10 W Peak at 3.
1 GHz • Linear Gain: 17 dB at 3.
1 GHz • Operating Voltage: 32 V • Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.
The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency a...