Huajing Discrete Devices
○R
Silicon N-Channel Power MOSFET
CS12N65F A9H
General Description：
CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD (TC=25℃) RDS(ON)Typ
650 12 55 0.
54
switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.
7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse a...