2SD1224
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process) (darlington)
2SD1224
Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
30 30 10 1.
5 0.
15 1.
0 10 150 −55 to 150
Unit V V V A A
W
°C °C
...