30V P-Channel MOSFETs
PDC3905Z
General Description These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK3x3 Pin Configuration
DDDD S S SG
G
D S
BVDSS -30V
RDSON 15mΩ
ID -30A
Features -30V,-30A, RDS(ON) =18mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.
5V Gate Drive Applications
Applications
MB / VGA / Vcore POL Applications Load Sw...