FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ Features „ Typ rDS(on) = 52.
5mΩ at VGS = -4.
5V, ID = -4A „ Typ rDS(on) = 75.
3mΩ at VGS = -2.
5V, ID = -3.
2A „ Fast switching speed „ Low gate charge(6.
9nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick).
„ RoHS Compliant „ Qualified to AEC Q101 Applications „ Load switch „ Battery protection „ Power management June 2009 S D D SuperSOT TM-6 G D D S4 D5 D6 3G 2D 1D ©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev.
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