FDD4685_F085 P-Channel PowerTrench® MOSFET FDD4685_F085 P-Channel PowerTrench® MOSFET -40V, -32A, 35mΩ Features „ Typ rDS(on) = 23mΩ at VGS = -10V, ID = -8.
4A „ Typ rDS(on) = 30mΩ at VGS = -4.
5V, ID = -7A „ Typ Qg(TOT) = 19nC at VGS = -5V „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Inverter „ Power Supplies December 2010 ©2010 Fairchild Semiconductor Corporation FDD4685_F085 Rev.
C 1 www.
fairchildsemi.
com FDD4685_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC...

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