Part Number
|
IS45S16800E |
Manufacturer
|
Integrated Silicon Solution |
Description
|
128Mb SYNCHRONOUS DRAM |
Published
|
Jun 18, 2015 |
Detailed Description
|
IS45S81600E IS45S16800E
1162M8Mxb8S, Y8NMCxH1R6O NOUS DRAM DECEMBER 2011
FEATURES
• Clock frequency: 166, 143 MHz
•...
|
Datasheet
|
IS45S16800E
|
Overview
IS45S81600E IS45S16800E
1162M8Mxb8S, Y8NMCxH1R6O NOUS DRAM DECEMBER 2011
FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
IS45S81600E
Vdd Vddq 3.
3V 3.
3V
IS45S16800E
3.
3V 3.
3V
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read...
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