SVF3N80M/F/D_Datasheet
3A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF3N80M/F/D is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 3A, 800V, RDS(on)(typ.
)=3.
8Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOM...