INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD858
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation
APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
60 V 5V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
10 A 60 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
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INCHANGE Semiconductor
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