| Part Number | IPP90R800C3 |
| Manufacturer | Infineon Technologies |
| Title | Power Transistor |
| Description | CoolMOS™ Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to... |
| Features |
• Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge IPP90R800C3 Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 V 0.8 Ω 4... |
| File Size | 283.41KB |
| Datasheet |
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IPP90R800C3 : isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 6.9 4.4 15 PD Total Dissipation 104 Tj Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt.