TPC8018-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8018-H
High-Speed and High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
Unit: mm
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 12 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 3.
5 mΩ (typ.
) • High forward transfer admittance: |Yfs| =50 S (typ.
) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-sour...