YANGZHOU GENESIS-JINGLAI SEMICONDUCTOR MANUFACTURE Co.
,LTD
DK43N
NPN
■ 110V~130V、、。
■
■
- - -
TC=25℃
V CEO V CBO V EBO IC
P tot(1)
Ta=25℃
P tot(2)
T jm T stg
220
350
9
1.
5 15(TO-92) 40(TO-126、TO-251) 1.
0(TO-92) 1.
25(TO-126、TO-251)
150
-55~+150
V V V A W
W
℃ ℃
BCE BCE
BCE
TO-92 TO-126 TO-251
■ (Ta=25℃)
- - - - -
I CBO I EBO h FE V CE(sat) V BE(sat) V (BR)CEO tS fT
VCB=350 V VEB=9 V VCE=5 V,IC=0.
5 A IC=1 A , IB=0.
25 A IC=1 A , IB=0.
25 A IC=1 mA IC=0.
5 A, IB=0.
1 A, VCE=5 V VCE=10 V,IC=0.
5 A, f=1 MHz
≤0.
1 ≤1 10~40 ≤1.
0 ≤1.
2 ≥220 ≤1.
8 ≥4
mA mA
V V V µs MHz
...