PD 91470F
INSULATED GATE BIPOLAR
TRANSISTOR
IRG4PC50U
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-247AC package
C
G E
n-channel
VCES = 600V VCE(on) typ.
= 1.
65V
@VGE = 15V, IC = 27A
Benefits
• Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM IL...