INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565
APPLICATIONS ·Medium Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICP Collector Current-Pulse Collector Power Dissipation
PC @ TC=25℃ TJ Junction Temperature
Tstg Storage Temperature Range
-150 -5 -1 -1.
5 10 150
-55~150
V V A A W ℃ ℃
isc Product Specification
2SA795
isc Website：www.
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