SEMICONDUCTOR
TECHNICAL DATA
KHB4D0N65P/F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for switch mode power supplies.
FEATURES VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.
0 @VGS = 10V Qg(typ.
)=20nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB4D0N65P KHB4D0N65F
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25 Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power ...