S DM4435 P -C hannel E nhancement Mode MOS FE T J ul.
27 2004 ver1.
1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max -30V -8A 20 @ VGS = -10V 35 @ VGS = -4.
5V F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
DDDD 8 7 65 5 S O-8 1 1 234 S SS G ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C -P ulsed b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 25 -8 -40 -1.
7 2.
5 -55 to 150 Unit V V A A A ...

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