SEMICONDUCTOR
RFP70N03, RF1S70N03, RF1S70N03SM
December 1995
70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Features
• 70A, 30V • rDS(ON) = 0.
010Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature
Description
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching
regulators, switching converters, motor drive...