Part Number
|
K2554 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
2SK2554 |
Published
|
Jul 8, 2015 |
Detailed Description
|
2SK2554
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • RDS(on) = 4.5 m...
|
Datasheet
|
K2554
|
Overview
2SK2554
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • RDS(on) = 4.
5 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO-3P
ADE-208-359 D 5th.
Edition
D
G1 2 3 1.
Gate 2.
Drain (Flange)
S 3.
Source
2SK2554
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 %
2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS VGSS ID I *1
D(pulse)
I DR* ...
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