Transistors
2SD2504
Silicon
NPN epitaxial planar type
For low-frequency power amplification
■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
15 10 10 5 9 750 150 −55 to +150
Note) *: t = 380 µs
Unit V V V A A mW °C °C
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5.
0±0.
2
Unit: mm
4.
0±0.
2
5.
1±0.
2
0.
7±0.
2 12.
9±0.
5
0.
7±0.
1
0.
45+–00.
.
115 2.
5+–00.
.
26
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