DESCRIPTION
MT2301
P- Channel Enhancement Mode MOSFET
The MT2301 is the P-Channel logic enhancement mode power field effect
transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
APPLICATIONS
¾ -20V/-2.
8A, RDS(ON) = 120mΩ @ VGS = -4.
5V ¾ -20V/-2.
5A, RDS(ON) = 170mΩ @ VGS = -2.
5V ¾ Super high density cell design for extremely lo...