AOV11S60
600V 8A α MOS TM Power
Transistor
General Description
Product Summary
The AOV11S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 45A 0.
5Ω 11nC 2.
7µJ
Top View
DFN8X8
Bottom View
D
G
Pin1:G AOV11S60
S S
Pin2: Driver Source
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Sourc...