TPCS8008-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCS8008-H
High-Speed Switching Applications Switching
Regulator Applications DC/DC Converter Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 0.
48 Ω (typ.
) • High forward transfer admittance: |Yfs| = 1.
8 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) • Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a)
Drain power dissipation (t = 10 s) ...