LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode MAXIMUM RATINGS (TA = 25oC) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Symbol VR IR IFM(surge) Max 75 200 500 Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm) PD 200 1.
6 Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.
6 mm) Symbol RθJA Max 0.
625 DEVICE MARKING LBAS16WT1 = A6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise note...

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