Part Number
|
S-LBAS16WT1G |
Manufacturer
|
Leshan Radio Company |
Description
|
Switching Diode |
Published
|
Jul 18, 2015 |
Detailed Description
|
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode
FEATURE
z We declare that the material of product compliance with R...
|
Datasheet
|
S-LBAS16WT1G
|
Overview
LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode
FEATURE
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable.
MAXIMUM RATINGS (TA = 25oC)
Rating
Symbol
Max
Continuous Reverse Voltage
VR 75
Recurrent Peak Forward Current
IR 200
Peak Forward Surge Current Pulse Width = 10 µs
IFM(surge)
500
Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate
(10 x 8 x 0.
6 mm)
PD
200 1.
6
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
THERMAL CHARACTERISTI...
Similar Datasheet