LESHAN RADIO COMPANY, LTD.
Silicon Hot–Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector applications.
They are readily adaptable to many other fast switching RF and digital applications.
They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.
They are also available in a Surface Mount package.
• EXtremely Low Minority Carrier Lifetime –15ps(Typ) • Very Low Capacitance –1.
5pF(Max)@VR=15V • Low Reverse Leakage –IR=13 nAdc(Typ) LMBD301
3 CATHODE
1 ANODE
LMBD301LT1
3
1 2
SOT–23
MAXIMUM RATINGS(TJ=125°C unless otherwise noted)
LBD301 LMBD301LT1
Rating
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