Freescale Semiconductor Technical Data
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF power
transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.
8 to
2000 MHz.
These devices are fabricated using Freescale’s enhanced
ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
Typical Performance: VDD = 50 Volts
Frequency (MHz)
Signal Type
Pout (W)
Gps (dB)
ηD IMD (%) (dBc)
30--512 (1,3)
Two--Tone (100 kHz spacing)
100 PEP
19.
0
30.
0
--30
512 (2)
CW
100
27.
2 70.
0
—
512 (2)
Pulse (200 μsec, 20% 100 Peak Duty Cycle)
26.
0
...